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  • SICTECH MHD silicon carbide heat element e amohela theknoloji ea morao-rao ea ho futhumatsa Chaena le kantle ho naha. Mocheso o phahameng o ka fihla ho 1625 likhato tsa Celsius. E na le letsoalo le phahameng le porosity e tlase. E ka hanela khoholeho ea moeeng ea likhase tse kotsi, mouoane oa metsi le li-oxide tsa tšepe. Lebelo la botsofe, nako e telele ea tšebeliso, phokotso ea maqhubu a sebaka, ho theola litšenyehelo tsa tlhahiso bakeng sa basebelisi, e loketseng libaka tse batloang joalo ka khalase, lisebelisoa tsa elektroniki le lisebelisoa tsa tšepe tsa bohlokoa.
    Huanneng SICTECH silicon carbide heat element e ka fana ka lisebelisoa tse fapaneng tsa ho futhumatsa 'mele le likarolo, likarolo tse futhumatsang tse nang le li-tubular, lintho tse futhumatsang tse tiileng, likarolo tsa ho futhumatsa moeeng,' me li ka etsoa ho latela litlhoko tsa bareki. SICTECH silicon carbide e futhumatsang e ka fana ka mefuta e fapaneng ea liaparo tsa bokaholimo ho latela libaka tse fapaneng tsa tlhahiso ea sebōpi; e ka thibela likhase tse sa tsitsang hantle joalo ka mouoane oa metsi, naetrojene, haedrojene, likhase tse nang le alkaline, li-oxide tsa tšepe, jj., ka katleho e fokotsa khoholeho ea mochini oa ho futhumatsa ha silicon carbide ka methapo e kotsi ea khase.

    Litšobotsi tsa 'mele

       

    Litšobotsi Lintho

    Yuniti

    Tlanya

    GD / U / W.

    HGD

    LS / LD

    Boikitlaetso ba boikaketsi

    3.2

    3.2

    3.1

    Bongata ba bongata

    2.5

    2.58

    2.8

    Ho bonahala Porosity

    %

    23

    20

    5

    Matla a kobang

    MPa ho 25 ℃

    50

    60

    98

    Mocheso o khethehileng

    kj / kg + ℃ ho 25 ℃ -1300 ℃

    1.0

    1.0

    1.0

    Boitšoaro ba mocheso

    W / m + ℃ ka 1000 ℃

    12-18

    14-19

    16-21

    Ka lebitso Khanyetso

    Ω cm ho 1000 ℃

    0.08

    0.1

    0.016

    Coefficient ea Keketseho ea Thermal

    1000 ℃ (X 10-6 / ℃)

    4.5

    4.5

    4.5